Title :
Millimeter-wave BiST and BiSC using a high-definition sub-ranged detector in 90nm CMOS
Author :
Sleiman, Sleiman Bou ; Akour, Amneh ; Khalil, Waleed ; Ismail, Mohammed
Author_Institution :
ECE Dept., Ohio State Univ., Columbus, OH, USA
Abstract :
A wideband CMOS mm-Wave amplitude detector for on-chip self-test and calibration is presented. The high-conversion-gain detector enables accurate on-chip amplitude measurements and allows for the prediction of key RF parameters. The detector operates across the 60 GHz band and achieves a dynamic range of 0-0.5 V and a sensitivity of -9 V/V. The detector´s practical use in mm-wave Built-in-Self-Test (BiST) and Built-in-Self-Calibration (BiSC) circuits is demonstrated using a 60 GHz CMOS LNA. Simulation results show that the LNA gain, compression point, and intermodulation distortion are predicted with minimal error. The detector and LNA are built in IBM´s 90 nm CMOS technology.
Keywords :
CMOS analogue integrated circuits; built-in self test; calibration; detector circuits; intermodulation distortion; low noise amplifiers; millimetre wave circuits; radiofrequency integrated circuits; system-on-chip; BiSC circuits; CMOS LNA; CMOS technology; LNA gain; RF parameters; built-in-self-calibration circuits; compression point; frequency 60 GHz; high-conversion-gain detector; high-definition sub-ranged detector; intermodulation distortion; millimeter-wave BiST; mm-wave built-in-self-test; on-chip amplitude measurements; on-chip self-test; size 90 nm; wideband CMOS mm-wave amplitude detector; Built-in self-test; CMOS technology; Calibration; Circuits; Detectors; Dynamic range; Millimeter wave measurements; Millimeter wave technology; Radio frequency; Wideband;
Conference_Titel :
Circuits and Systems (MWSCAS), 2010 53rd IEEE International Midwest Symposium on
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4244-7771-5
DOI :
10.1109/MWSCAS.2010.5548737