• DocumentCode
    1572672
  • Title

    Semi-polar green LEDs on c-plane sapphire substrates

  • Author

    Jung, Taeil ; Lee, L. ; Ku, P.E.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI
  • fYear
    2008
  • Firstpage
    571
  • Lastpage
    572
  • Abstract
    We demonstrated the first semipolar Ill-nitride green LED grown on c-plane sapphire substrates. The emission wavelength under CW current injection was 543 nm and showed negligible quantum confined Stark effect.
  • Keywords
    III-V semiconductors; MOCVD; light emitting diodes; semiconductor growth; Al2O3; MOCVD; c-plane sapphire substrates; continuous-wave current injection; emission wavelength; quantum confined Stark effect; semipolar Ill-nitride LED; semipolar green LED; wavelength 543 nm; Capacitive sensors; Costs; Gallium nitride; Gold; Lasers and Electro-Optics Society; Light emitting diodes; Potential well; Quantum well devices; Stark effect; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
  • Conference_Location
    Acapulco
  • Print_ISBN
    978-1-4244-1931-9
  • Electronic_ISBN
    978-1-4244-1932-6
  • Type

    conf

  • DOI
    10.1109/LEOS.2008.4688746
  • Filename
    4688746
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1572672