Title :
Semi-polar green LEDs on c-plane sapphire substrates
Author :
Jung, Taeil ; Lee, L. ; Ku, P.E.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI
Abstract :
We demonstrated the first semipolar Ill-nitride green LED grown on c-plane sapphire substrates. The emission wavelength under CW current injection was 543 nm and showed negligible quantum confined Stark effect.
Keywords :
III-V semiconductors; MOCVD; light emitting diodes; semiconductor growth; Al2O3; MOCVD; c-plane sapphire substrates; continuous-wave current injection; emission wavelength; quantum confined Stark effect; semipolar Ill-nitride LED; semipolar green LED; wavelength 543 nm; Capacitive sensors; Costs; Gallium nitride; Gold; Lasers and Electro-Optics Society; Light emitting diodes; Potential well; Quantum well devices; Stark effect; Substrates;
Conference_Titel :
IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
Conference_Location :
Acapulco
Print_ISBN :
978-1-4244-1931-9
Electronic_ISBN :
978-1-4244-1932-6
DOI :
10.1109/LEOS.2008.4688746
