DocumentCode
1572865
Title
GaAs-based bipolar cascade light-emitting-diodes and superluminescent-diodes at the 1.04-μm wavelength regime
Author
Guol, Shi-Hao ; Wang, Jr-Hung ; Wu, Yu-Huei ; Lin, Wei ; Yang, Ying-Jay ; Sun, Chi-Kuang ; Pan, Ci-Ling ; Shi, Jin-Wei
Author_Institution
Grad. Inst. of Photonics & Optoelectron., Nat. Taiwan Univ., Taipei
fYear
2008
Firstpage
589
Lastpage
590
Abstract
We first demonstrate GaAs-based bipolar cascade superluminescent-diodes by use of chirped multiple-quantum-wells in series by a tunnel junction, effectively minimizing the problem of non-uniform carrier-distribution among MQWs and operating around important bio-optical window of 1.04-mum wavelength.
Keywords
III-V semiconductors; gallium arsenide; quantum well devices; superluminescent diodes; GaAs; bipolar cascade light emitting diodes; chirped multiple quantum wells; nonuniform carrier distribution; superluminescent diodes; tunnel junction; Light emitting diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
Conference_Location
Acapulco
Print_ISBN
978-1-4244-1931-9
Electronic_ISBN
978-1-4244-1932-6
Type
conf
DOI
10.1109/LEOS.2008.4688755
Filename
4688755
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