Electrically confined quantum dot intersubband optoelectronic devices

Author

Wu, Wei ; Dey, Dibyendu ; Memis, Omer G. ; Katnelson, Alex ; Mohseni, Hooman

Author_Institution

Dept. of EECS, Northwestern Univ., Evanston, IL

fYear

2008

Firstpage

618

Lastpage

619

Abstract

Here we will present a novel method of forming QD based on the lateral confinement on QW by electrical field. The electrical field would deplete the QW into a very small region, forming a "quantum disk". The field induced lateral confinement combined with the vertical confinement of the QW would form a three dimensional confinement.

Keywords

optical design techniques; photodetectors; quantum cascade lasers; semiconductor quantum dots; FTIR spectroscopy; cascade lasers; chemical process monitoring; electrical field induced lateral confinement; electrically confined QD intersubband optoelectronic devices; environmental monitoring; intersubband energy spacing; intersubband photodetectors; mid-infrared laser; space based infrared imaging; thermal imaging; three dimensional confinement; Chemical lasers; Electrons; Face detection; Optoelectronic devices; Photodetectors; Potential well; Quantum cascade lasers; Quantum dot lasers; Quantum dots; Quantum well lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the

Conference_Location

Acapulco

Print_ISBN

978-1-4244-1931-9

Electronic_ISBN

978-1-4244-1932-6

Type

conf

DOI

10.1109/LEOS.2008.4688770

Filename

4688770

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1573175