DocumentCode
1573229
Title
Level shifter speed, power, and reliability trade-offs across normal and reverse temperature dependences
Author
Wolpert, David ; Ampadu, Paul
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Rochester, Rochester, NY, USA
fYear
2010
Firstpage
1254
Lastpage
1257
Abstract
In this paper, we study the impact of the normal and reverse temperature dependences on low-voltage level shifters, which are particularly interesting because they may have components that operate in both dependence regions. The speed, power, and delay variation trade-offs of two level shifter designs are examined for a range of voltage swings, drive strengths and process corners in a commercial 65 nm technology. The PG level shifter is found to provide better delay and power performance than the DCVSL level shifter; however, the limited range of functional operating conditions in the PG structure make the DCVSL unit a superior choice for reliable system designs.
Keywords
integrated circuit design; integrated circuit reliability; low-power electronics; phase shifters; DCVSL level shifter; PG level shifter; delay variation; dependence region; drive strength; level shifter design; low-voltage level shifter; normal temperature dependence; power; reliability; reverse temperature dependence; size 65 nm; speed; voltage swing; Delay; Dynamic voltage scaling; Low voltage; MOSFET circuits; Power MOSFET; Power system reliability; Temperature dependence; Temperature distribution; Threshold voltage; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems (MWSCAS), 2010 53rd IEEE International Midwest Symposium on
Conference_Location
Seattle, WA
ISSN
1548-3746
Print_ISBN
978-1-4244-7771-5
Type
conf
DOI
10.1109/MWSCAS.2010.5548766
Filename
5548766
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