Title :
Selective lateral anodic etching of n-doped GaN without photo-assistance for lift-off application
Author :
Song, Kwangmin ; Park, Joonmo ; Do, Hyung-A ; Ryu, Sang-Wan
Author_Institution :
Dept. of Phys., Chonnam Nat. Univ., Gwangju
Abstract :
An anodic etching technique for selective lateral wet etching of n-doped GaN without the photo-assistance was described. N-doped GaN was successfully etched with 0.3 M oxalic acid at 40 V.
Keywords :
III-V semiconductors; anodisation; etching; gallium compounds; GaN; lift-off application; photoassistance; selective lateral anodic etching; selective lateral wet etching; Electrochemical processes; Gallium nitride; Light emitting diodes; Optical microscopy; Physics; Scanning electron microscopy; Substrates; Thermal conductivity; Voltage; Wet etching;
Conference_Titel :
IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
Conference_Location :
Acapulco
Print_ISBN :
978-1-4244-1931-9
Electronic_ISBN :
978-1-4244-1932-6
DOI :
10.1109/LEOS.2008.4688779
