• DocumentCode
    1573327
  • Title

    Design of an integrated power converter in Wide Band Gap for harsh environments

  • Author

    Mogniotte, Jean-François ; Tournier, Dominique ; Bevilacqua, Pascal ; Godignon, Philippe ; Planson, Dominique

  • Author_Institution
    Lab. Ampere, Univ. de Lyon, Ampere, France
  • fYear
    2012
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    AMPERE laboratory (Lyon, France) and Center National Microelectronics of Barcelona (SPAIN) have recently developed lateral MESFETs in SiC. The current purpose is to develop electronic systems based on these MESFETs for applications operating in harsh environments (e.g. High Temperature >; 300°C). This paper presents the design of an integrated power converter with its driver in SiC and the characterisation of elementary functions.
  • Keywords
    Schottky gate field effect transistors; integrated circuit design; power convertors; silicon compounds; wide band gap semiconductors; SiC; electronic system; elementary function; integrated power converter design; lateral MESFET; wide band gap; Mercury (metals);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Power Electronics Systems (CIPS), 2012 7th International Conference on
  • Conference_Location
    Nuremberg
  • Print_ISBN
    978-3-8007-3414-6
  • Type

    conf

  • Filename
    6170658
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1573327