Title :
Effect of oxygen partial pressure in the La-Sr-Mn-O granular thin films
Author :
Geun Young Ahn ; In-Bo Shim ; Chul Sung Kim
Author_Institution :
Kookmin University
Abstract :
Summary form only given. Recently a great deal of attention has been focused on the magnetoresistance (MR) properties of manganese perovskite. In most cases the large resistance changes are achieved only in a strong field in the Tesla range, thus severely limiting their practical utility. So many researchers have been studied low field magnetoresistance materials[1],[2]. We present the sputtering conditions dependent of microstructures, surface charactristics, magnetic and low-field MR properties of La-Sr-Mn-O granular thin films.
Keywords :
Oxygen; Transistors;
Conference_Titel :
Magnetics Conference, 2002. INTERMAG Europe 2002. Digest of Technical Papers. 2002 IEEE International
Conference_Location :
Amsterdam, The Netherlands
Print_ISBN :
0-7803-7365-0
DOI :
10.1109/INTMAG.2002.1001325