Title :
Beyond-Si CMOS technologies based on high-mobility channels
Author_Institution :
Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA
Abstract :
For over 4 decades, the steady increase in switching speed of MOS transistors has been mainly achieved by scaling down the gate oxide thickness, the channel length, and other associated physical dimensions. In recent years, strain engineering to increase the carrier mobility has also been a significant contributor to the improved switching speed. These measures have been able to keep Si as the only semiconductor for high-density and high-performance CMOS technology.
Keywords :
CMOS integrated circuits; MOSFET; carrier mobility; elemental semiconductors; silicon; MOS transistors; Si; beyond-Si CMOS technology; carrier mobility; channel length; gate oxide thickness; high-density CMOS technology; high-mobility channels; high-performance CMOS technology; physical dimensions; switching speed; CMOS integrated circuits; CMOS technology; III-V semiconductor materials; Logic gates; Silicon; Switching circuits;
Conference_Titel :
Device Research Conference (DRC), 2013 71st Annual
Conference_Location :
Notre Dame, IN
Print_ISBN :
978-1-4799-0811-0
DOI :
10.1109/DRC.2013.6633766
