Noise in thin half-metallic oxide films

Summary form only given. Half-metallic oxides are beginning to be studied for applications in spin-electronic devices, but noise is these devices may become a real concern as some of the oxides are found to show huge low-frequency noise. This is a severe limitation for the use of these materials in integrated devices. Sr/sub 2/FeMoO/sub 6/ films with the ordered double-perovskite structure have T/sub c/ well above 350 K and a degree of spin polarization. This may offer a successful alternative to La/sub 0.7/Sr/sub 0.3/MnO/sub 3/ for room temperature application, but so far, no noise study has been reported in this material. We use the AC cross-correlation method to determine noise in the range 1mHz-100 kHz. In this study, we have analysed the influence of deposition techniques and substrate on noise in thin magnetic oxide films.