Double modified internal gate (MIG) pixel for fluorescence imaging applications

Author

Durini, Daniel ; Aurola, Artto ; Brockherde, Werner ; Hosticka, Bedrich J. ; Grabmaier, Anton

Author_Institution

Fraunhofer IMS, Duisburg, Germany

fYear

2009

Firstpage

9

Lastpage

12

Abstract

In this work we present a double modified internal gate (MIG) pixel structure, fabricated in a slightly modified 0.35 mum CMOS process, to be effectively used in, e.g. low-level irradiance fluorescent imaging applications. The pixel structure enables a non-destructive readout, which facilitates a constant monitoring of the molecule fluorescence process. The readout is based on signal averaging and up-the-ramp sampling current differential readout, which drastically reduces the amount of noise in the pixel output signal. The modified internal gates enable extremely low dark-current and very low-noise operation.

Keywords

CMOS image sensors; biomedical optical imaging; fluorescence; nondestructive readout; CMOS image sensors; double modified internal gate pixel; fluorescence imaging; nondestructive readout; sampling current differential readout; signal averaging; size 0.35 mum; CMOS process; Charge coupled devices; Fluorescence; Microscopy; Monitoring; Noise generators; Noise reduction; Optical imaging; Pixel; Signal sampling; CMOS imaging; fluroescence continuous imaging; low dark-current; modified internal gate (MIG); non-destructive readout; ultra low-noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuit Theory and Design, 2009. ECCTD 2009. European Conference on

Conference_Location

Antalya

Print_ISBN

978-1-4244-3896-9

Electronic_ISBN

978-1-4244-3896-9

Type

conf

DOI

10.1109/ECCTD.2009.5275141

Filename

5275141