DocumentCode
1573803
Title
A low power CMOS capacitance to pulse duration converter based on a dual clock approach
Author
Dei, M. ; Butti, F. ; Bruschi, P. ; Piotto, M.
Author_Institution
Dipt. di Ing. dell´´Inf., Univ. of Pisa, Pisa, Italy
fYear
2009
Firstpage
13
Lastpage
16
Abstract
An interface for integrated capacitive sensors producing a PWM signal is presented. The circuit is based on a recently proposed architecture, which is here improved by the introduction of a double clock strategy allowing jitter reduction. The non idealities of the circuit are investigated in order to obtain design criteria to reduce the jitter and the temperature dependence. The approach is validated with electrical simulations performed on a prototype designed with devices from the 0.32 mum CMOS subset of the STMicroelectronics BCD6s process.
Keywords
CMOS integrated circuits; capacitive sensors; clocks; low-power electronics; microsensors; MEMS sensor; PWM signal; STMicroelectronics BCD6 process; double clock strategy; electrical simulation; jitter reduction; low-power CMOS capacitance sensor; pulse duration converter; size 0.32 mum; CMOS process; Capacitance; Capacitive sensors; Circuit simulation; Clocks; Jitter; Pulse width modulation; Pulse width modulation converters; Temperature dependence; Virtual prototyping; MEMS sensors; capacitive sensorinterface; low power; low temperature drift;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuit Theory and Design, 2009. ECCTD 2009. European Conference on
Conference_Location
Antalya
Print_ISBN
978-1-4244-3896-9
Electronic_ISBN
978-1-4244-3896-9
Type
conf
DOI
10.1109/ECCTD.2009.5275144
Filename
5275144
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