DocumentCode
1573815
Title
High temperature and wide range 40-GHz passive mode-ocking operation of an AlGaInAs 1.55-μm strained quantum well laser
Author
Hou, Lianping ; Stolarz, Piotr ; Ironside, Charlie N. ; Sorel, Marc ; Bryce, Catrina
Author_Institution
Dept. of Electron. & Electr. Eng., Univ. of Glasgow, Glasgow
fYear
2008
Firstpage
679
Lastpage
680
Abstract
Passive mode locking at 40 GHz is reported on AlGaInAs strained multi-quantum-well lasers. The devices show very stable mode locking operation over a very large range of biasing conditions and up to temperatures of 100degC.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; laser mode locking; quantum well lasers; AlGaInAs; biasing conditions; frequency 40 GHz; passive mode-locking operation; strained multiquantum-well lasers; temperature 100 degC; wavelength 1.55 mum; Frequency; Laser mode locking; Laser modes; Optical amplifiers; Optical materials; Optical pulses; Optical waveguides; Quantum well lasers; Temperature distribution; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
Conference_Location
Acapulco
Print_ISBN
978-1-4244-1931-9
Electronic_ISBN
978-1-4244-1932-6
Type
conf
DOI
10.1109/LEOS.2008.4688801
Filename
4688801
Link To Document