Title :
Frequency divider design using the Λ-type negative-differential-resistance circuit
Author :
Liang, Dong-Shong ; Gan, Kwang-Jow ; Chun, Kuan-Yu
Author_Institution :
Dept. of Electron. Eng., Kun Shan Univ., Tainan, Taiwan
Abstract :
The behavior of a frequency divider circuit using a Λ-type negative differential resistance (NDR) circuit, which is composed of Si-based metal-oxide-semiconductor field-effect-transistor (MOS) and SiGe-based heterojunction bipolar transistor (HBT) devices, is studied. This frequency divider is mainly made of a MOS-HBT-NDR circuit, an inductor, and a capacitor. The operation is based on the long-period behavior of the NDR-based chaos circuit. We demonstrate the high-frequency consideration and characteristic of this frequency divider. The results show that the dividing ratio can be selected by modulating the input signal frequency.
Keywords :
MOSFET; chaos; frequency dividers; heterojunction bipolar transistors; λ-type negative-differential-resistance circuit; MOS-HBT-NDR circuit; NDR-based chaos circuit; Si-based metal-oxide-semiconductor field-effect-transistor; SiGe-based heterojunction bipolar transistor devices; frequency divider circuit; frequency divider design; BiCMOS integrated circuits; CMOS technology; Chaotic communication; Circuit simulation; Design engineering; Frequency conversion; Heterojunction bipolar transistors; RLC circuits; Silicon germanium; Voltage;
Conference_Titel :
Circuits and Systems (MWSCAS), 2010 53rd IEEE International Midwest Symposium on
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4244-7771-5
DOI :
10.1109/MWSCAS.2010.5548795
