Realistic simulation of graphene transistors including non-ideal electrostatics

Graphene is a promising candidate for future electronics such as RF transistors, interconnects and flexible components. The simulation and analysis of graphene transistors (GFETs) has so far relied on two approaches: on one hand, compact modeling is efficient but tends to lack physical details and neglects geometric phenomena such as fringing electric fields. On the other hand, atomistic simulations with non-equilibrium Green´s functions (NEGF) rigorously account for quantum effects, but phonon scattering is challenging to incorporate realistically, rendering simulation results which are often difficult to compare with experimental data.Here we introduce a new simulation framework better suited for short channel GFETs, which includes the full device electrostatics and physical mechanisms like band-to-band generation-recombination, realistic contact geometry, generalized diffusion, quantum capacitance, and carrier density dependent velocity saturation (v_sat).