DocumentCode :
1573908
Title :
A comparative study of lock range of injection-locked active-inductor oscillators
Author :
Zhou, Yushi ; Yuan, Fei
Author_Institution :
Dept. of Electr. & Comput. Eng., Ryerson Univ., Toronto, ON, Canada
fYear :
2010
Firstpage :
973
Lastpage :
976
Abstract :
This paper presents the first study of the locking mechanism and lock range of injection-locked active inductor oscillators. A comparable study on the phase noise and lock range of active inductor oscillators and corresponding LC oscillators is carried out. Two 2.4 GHz oscillators, one active inductor oscillator and the other passive LC oscillator, are designed in IBM 0.13 μm 1.2 V CMOS technology and analyzed using Spectre using BSIM4 device models. Simulation results demonstrate that the phase noise of the active inductor oscillator is -70.45 dBc/Hz at 1 MHz frequency offset without locking and -117.9 dBc/Hz when locked to an external 2.4 GHz reference of phase noise -126.6 dBc/Hz. The phase noise of the LC oscillator is -105.1 dBc/Hz without locking and -126.1 dBc/Hz when locked. The upper and lower bounds of the frequency of the locking signal at which the injection-locked LC oscillator is locked are 2.4+0.02 GHz and 2.4-0.02 GHz, respectively where those of the injection-locked active inductor oscillator are 2.4+0.24 GHz and 2.4-0.12 GHz, respectively. The lock range of the injection-locked active inductor oscillator is 9 times that of the corresponding injection-locked passive LC oscillator with comparable phase noise.
Keywords :
CMOS integrated circuits; UHF oscillators; active networks; injection locked oscillators; passive networks; phase noise; BSIM4 device models; CMOS technology; LC oscillators; Spectre; frequency 2.4 GHz to 0.12 GHz; injection-locked active-inductor oscillators; injection-locked passive LC oscillator; lock range; locking mechanism; locking signal; lower bounds; phase noise; size 0.13 mum; upper bounds; Active inductors; CMOS technology; Frequency conversion; Frequency synthesizers; Injection-locked oscillators; Phase noise; Q factor; Silicon; Transconductance; Tuning;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (MWSCAS), 2010 53rd IEEE International Midwest Symposium on
Conference_Location :
Seattle, WA
ISSN :
1548-3746
Print_ISBN :
978-1-4244-7771-5
Type :
conf
DOI :
10.1109/MWSCAS.2010.5548797
Filename :
5548797
Link To Document :
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