Title :
State-of-the-art flexible 2D nanoelectronics based on graphene and MoS2
Author :
Jongho Lee ; Hsiao-Yu Chang ; Parrish, Kristen N. ; Huifeng Li ; Ruoff, Rodney S. ; Akinwande, Deji
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Texas, Austin, TX, USA
Abstract :
The authors report a flexible transistors based on 2D atomic sheets such as graphene and MoS2 that features record electrical-mechanical properties and offer the highest prospects for realizing Si-CMOS like performance on arbitrary plastic substrates. Graphene is ideal for analog RF devices while MoS2 is ideal for digital low-power FETs.
Keywords :
flexible electronics; graphene; molybdenum compounds; nanoelectronics; substrates; C; MoS2; arbitrary plastic substrate; electrical properties; flexible 2D nanoelectronics; flexible transistors; mechanical properties; Dielectrics; Field effect transistors; Graphene; Logic gates; Plastics; Substrates;
Conference_Titel :
Device Research Conference (DRC), 2013 71st Annual
Conference_Location :
Notre Dame, IN
Print_ISBN :
978-1-4799-0811-0
DOI :
10.1109/DRC.2013.6633786
