• DocumentCode
    1574014
  • Title

    State-of-the-art flexible 2D nanoelectronics based on graphene and MoS2

  • Author

    Jongho Lee ; Hsiao-Yu Chang ; Parrish, Kristen N. ; Huifeng Li ; Ruoff, Rodney S. ; Akinwande, Deji

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Texas, Austin, TX, USA
  • fYear
    2013
  • Firstpage
    43
  • Lastpage
    44
  • Abstract
    The authors report a flexible transistors based on 2D atomic sheets such as graphene and MoS2 that features record electrical-mechanical properties and offer the highest prospects for realizing Si-CMOS like performance on arbitrary plastic substrates. Graphene is ideal for analog RF devices while MoS2 is ideal for digital low-power FETs.
  • Keywords
    flexible electronics; graphene; molybdenum compounds; nanoelectronics; substrates; C; MoS2; arbitrary plastic substrate; electrical properties; flexible 2D nanoelectronics; flexible transistors; mechanical properties; Dielectrics; Field effect transistors; Graphene; Logic gates; Plastics; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2013 71st Annual
  • Conference_Location
    Notre Dame, IN
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4799-0811-0
  • Type

    conf

  • DOI
    10.1109/DRC.2013.6633786
  • Filename
    6633786
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1574014