Title :
How to Control SiC BJT with High Efficiency?
Author :
Wang, Luyu ; Baengtsson, H.
Author_Institution :
Div of IEA, Lund Univ., Lund, Sweden
Abstract :
SiC Bipolar Junction Transistor has many benefits such as low on-state voltage drop, high switching speed and high maximum operating temperature. However it has one major disadvantage that it needs current to be turned on. This causes an increased power requirement of the driver circuit compared to voltage controlled devices like MOSFETs and IGBTs. The proposed driving concept is based on a verified Darlington typology together with a voltage compensation component which gives a solution to this problem. The proposed driving concept is evaluated by both simulation and experimental results. The investigation of parallel connection of SiC BJT transistors that use the proposed drive concept is also included in this paper.
Keywords :
bipolar transistors; semiconductor device models; silicon compounds; Darlington typology; SiC; SiC BJT; bipolar junction transistor; on-state voltage drop; operating temperature; switching speed; voltage compensation component; voltage controlled device; Current transformers; Insulated gate bipolar transistors; Logic gates; Silicon carbide; Transistors; Voltage measurement; Windings;
Conference_Titel :
Integrated Power Electronics Systems (CIPS), 2012 7th International Conference on
Conference_Location :
Nuremberg
Print_ISBN :
978-3-8007-3414-6
