DocumentCode
1574166
Title
Double diode modeling of time/temperature induced degradation of solar cells
Author
Junsangsri, Pilin ; Lombardi, Fabrizio
Author_Institution
Dept. of Electr. & Comput. Eng., Northeastern Univ., Boston, MA, USA
fYear
2010
Firstpage
1005
Lastpage
1008
Abstract
This paper presents a simulation-based analysis of degradation of a solar cell as induced by temperature and/or time. Based on the double diode model (DDM) and using HSPICE, relationships are found between the parameters of the equivalent electrical circuit and efficiency, process variations and optimization in its operation. The results of this paper show that time, temperature and irradiance are of significance in DDM, because they affect the efficiency of a solar cell when degradation occurs.
Keywords
power engineering computing; solar cells; HSPICE; double diode modeling; equivalent electrical circuit; process variations; simulation-based analysis; solar cells; time-temperature induced degradation; Circuit simulation; Contact resistance; Degradation; Diodes; Distributed decision making; Equivalent circuits; Photovoltaic cells; Surface resistance; Temperature; Voltage; Degradation; PV model; Solar cells; equivalent circuit; temperature; time;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems (MWSCAS), 2010 53rd IEEE International Midwest Symposium on
Conference_Location
Seattle, WA
ISSN
1548-3746
Print_ISBN
978-1-4244-7771-5
Type
conf
DOI
10.1109/MWSCAS.2010.5548809
Filename
5548809
Link To Document