DocumentCode :
1574195
Title :
Improving extraction efficiency of III-nitride LEDs using in situ silane treatment
Author :
Jung, Taeil ; Lee, L. ; Ku, P.E.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI
fYear :
2008
Firstpage :
709
Lastpage :
710
Abstract :
We demonstrated a novel cost-effective approach to improve extraction efficiency of III-nitride LEDs, Photoluminescence measurement showed a factor of two improvement in extraction efficiency. Electroluminescence under CW injection was also shown.
Keywords :
III-V semiconductors; electroluminescence; light emitting diodes; photoluminescence; surface treatment; wide band gap semiconductors; CW injection; III-nitride LED; JkN; electroluminescence; extraction efficiency; photoluminescence; silane treatment; Etching; Gallium nitride; Light emitting diodes; Reflection; Rough surfaces; Scanning electron microscopy; Surface morphology; Surface roughness; Surface texture; Surface treatment;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
Conference_Location :
Acapulco
Print_ISBN :
978-1-4244-1931-9
Electronic_ISBN :
978-1-4244-1932-6
Type :
conf
DOI :
10.1109/LEOS.2008.4688816
Filename :
4688816
Link To Document :
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