DocumentCode
1574195
Title
Improving extraction efficiency of III-nitride LEDs using in situ silane treatment
Author
Jung, Taeil ; Lee, L. ; Ku, P.E.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI
fYear
2008
Firstpage
709
Lastpage
710
Abstract
We demonstrated a novel cost-effective approach to improve extraction efficiency of III-nitride LEDs, Photoluminescence measurement showed a factor of two improvement in extraction efficiency. Electroluminescence under CW injection was also shown.
Keywords
III-V semiconductors; electroluminescence; light emitting diodes; photoluminescence; surface treatment; wide band gap semiconductors; CW injection; III-nitride LED; JkN; electroluminescence; extraction efficiency; photoluminescence; silane treatment; Etching; Gallium nitride; Light emitting diodes; Reflection; Rough surfaces; Scanning electron microscopy; Surface morphology; Surface roughness; Surface texture; Surface treatment;
fLanguage
English
Publisher
ieee
Conference_Titel
IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
Conference_Location
Acapulco
Print_ISBN
978-1-4244-1931-9
Electronic_ISBN
978-1-4244-1932-6
Type
conf
DOI
10.1109/LEOS.2008.4688816
Filename
4688816
Link To Document