DocumentCode
1574260
Title
Design of a CMOS transducer interface for an UV silicon sensor
Author
Díaz-Méndez, A. ; Rocha-Pérez, M. ; Aceves, M. ; Pedraza, J. ; Gómez, E. ; Dominguez, C. ; Merlos, A. ; Formatje, X.
Author_Institution
Electron. Dept., INAOE, Puebla, Mexico
fYear
2010
Firstpage
308
Lastpage
311
Abstract
This paper presents the cointegration of an UV silicon sensor with extended responsivity, and its conditioning circuit. The sensor´s output current is converted to a digital code for subsequent processing. Post-layout results shows a suitable response in order to obtain a digital code corresponding to sensor photocurrent in the range of 200 to 1100nm. The circuit has been designed in a CNM 2.5μm CMOS technology.
Keywords
CMOS integrated circuits; integrated circuit design; photoconductivity; signal processing equipment; transducers; CMOS technology; CMOS transducer interface; UV silicon sensor; circuit design; digital code; sensor output current; sensor photocurrent; signal conditioning circuit; size 2.5 mum; CMOS technology; Capacitive sensors; Circuits; Optoelectronic and photonic sensors; Photoconductivity; Photonic band gap; Sensor systems; Signal processing; Silicon; Transducers;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems (MWSCAS), 2010 53rd IEEE International Midwest Symposium on
Conference_Location
Seattle, WA
ISSN
1548-3746
Print_ISBN
978-1-4244-7771-5
Type
conf
DOI
10.1109/MWSCAS.2010.5548811
Filename
5548811
Link To Document