Computational study of the mobility in ultra-thin topological insulator films

Author

Gen Yin ; Wickramaratne, Darshana ; Lake, Roger K.

Author_Institution

Dept. of Electr. Eng., Univ. of California, Riverside, Riverside, CA, USA

fYear

2013

Firstpage

69

Lastpage

70

Abstract

Topological insulators (TI) form a new class of quantum materials with an insulating band gap in the bulk and Dirac-cone surface states. Due to the strong momentum-spin k-s locking the propagating surface states are robust against non-magnetic impurities and defects, thus back-scattering of the surface states is prohibited. Three dimensional topological insulators were proposed in the 2011 edition of the International Technology Roadmap for Semiconductors as potential interconnects in integrated circuits. The high velocity combined with the topological protection could provide enhanced mobility.

Keywords

carrier mobility; surface states; thin films; topological insulators; Dirac-cone surface states; International Technology Roadmap for Semiconductors; back-scattering; bulk surface states; insulating band gap; mobility; quantum materials; strong momentum-spin k-s locking; three dimensional topological insulators; ultrathin topological insulator films; Integrated circuit interconnections; Materials; Photonic band gap; Scattering; Topological insulators; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference (DRC), 2013 71st Annual

Conference_Location

Notre Dame, IN

ISSN

1548-3770

Print_ISBN

978-1-4799-0811-0

Type

conf

DOI

10.1109/DRC.2013.6633797

Filename

6633797