Computational study of the mobility in ultra-thin topological insulator films

Topological insulators (TI) form a new class of quantum materials with an insulating band gap in the bulk and Dirac-cone surface states. Due to the strong momentum-spin k-s locking the propagating surface states are robust against non-magnetic impurities and defects, thus back-scattering of the surface states is prohibited. Three dimensional topological insulators were proposed in the 2011 edition of the International Technology Roadmap for Semiconductors as potential interconnects in integrated circuits. The high velocity combined with the topological protection could provide enhanced mobility.