Title :
Full-band quantum transport simulations of monolayer MoS2 transistors: Possibility of negative differential resistance
Author :
Jiwon Chang ; Register, Leonard F. ; Banerjee, Sanjay K.
Author_Institution :
Microelectron. Res. Center, Univ. of Texas, Austin, TX, USA
Abstract :
We study the transport properties of deeply scaled monolayer MoS2 n-channel metal-oxide-semiconductor field effect transistors (MOSFETs) using full-band ballistic non-equilibrium Green´s function simulations with an atomistic tight-binding Hamiltonian obtained from density functional theory (DFT).
Keywords :
MOSFET; density functional theory; molybdenum compounds; MOSFET; MoS2; atomistic tight-binding Hamiltonian; density functional theory; full-band ballistic non-equilibrium Green´s function simulations; full-band quantum transport simulations; monolayer transistors; n-channel metal-oxide-semiconductor field effect transistors; negative differential resistance; transport properties; Discrete Fourier transforms; Electric potential; Hafnium compounds; Logic gates; MOSFET; Scattering;
Conference_Titel :
Device Research Conference (DRC), 2013 71st Annual
Conference_Location :
Notre Dame, IN
Print_ISBN :
978-1-4799-0811-0
DOI :
10.1109/DRC.2013.6633800
