• DocumentCode
    1574362
  • Title

    Full-band quantum transport simulations of monolayer MoS2 transistors: Possibility of negative differential resistance

  • Author

    Jiwon Chang ; Register, Leonard F. ; Banerjee, Sanjay K.

  • Author_Institution
    Microelectron. Res. Center, Univ. of Texas, Austin, TX, USA
  • fYear
    2013
  • Firstpage
    75
  • Lastpage
    76
  • Abstract
    We study the transport properties of deeply scaled monolayer MoS2 n-channel metal-oxide-semiconductor field effect transistors (MOSFETs) using full-band ballistic non-equilibrium Green´s function simulations with an atomistic tight-binding Hamiltonian obtained from density functional theory (DFT).
  • Keywords
    MOSFET; density functional theory; molybdenum compounds; MOSFET; MoS2; atomistic tight-binding Hamiltonian; density functional theory; full-band ballistic non-equilibrium Green´s function simulations; full-band quantum transport simulations; monolayer transistors; n-channel metal-oxide-semiconductor field effect transistors; negative differential resistance; transport properties; Discrete Fourier transforms; Electric potential; Hafnium compounds; Logic gates; MOSFET; Scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2013 71st Annual
  • Conference_Location
    Notre Dame, IN
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4799-0811-0
  • Type

    conf

  • DOI
    10.1109/DRC.2013.6633800
  • Filename
    6633800
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1574362