Title :
Plasmonic terahertz wave detector based on silicon field-effect transistors with asymmetric source and drain structures
Author :
Min Woo Ryu ; Kibog Park ; Wook-Ki Park ; Seong-Tae Han ; Kyung Rok Kim
Author_Institution :
Ulsan Nat. Inst. of Sci. & Technol. (UNIST), Ulsan, South Korea
Abstract :
In this letter, we report the experimental demonstrations of the enhanced responsivity in Si metal-oxide-semiconductor (MOS) FET-based plasmonic THz detector [2, 3] with asymmetric source and drain region considering the device width variations.
Keywords :
MOSFET; elemental semiconductors; silicon; terahertz wave detectors; Si; Si metal-oxide-semiconductor FET; asymmetric drain structure; asymmetric source structure; plasmonic THz detector; plasmonic terahertz wave detector; silicon field-effect transistor; Bonding; Detectors; Gyrotrons; Logic gates; Plasmons; Silicon; Wires;
Conference_Titel :
Device Research Conference (DRC), 2013 71st Annual
Conference_Location :
Notre Dame, IN
Print_ISBN :
978-1-4799-0811-0
DOI :
10.1109/DRC.2013.6633811
