• DocumentCode
    1574614
  • Title

    Plasmonic terahertz wave detector based on silicon field-effect transistors with asymmetric source and drain structures

  • Author

    Min Woo Ryu ; Kibog Park ; Wook-Ki Park ; Seong-Tae Han ; Kyung Rok Kim

  • Author_Institution
    Ulsan Nat. Inst. of Sci. & Technol. (UNIST), Ulsan, South Korea
  • fYear
    2013
  • Firstpage
    97
  • Lastpage
    98
  • Abstract
    In this letter, we report the experimental demonstrations of the enhanced responsivity in Si metal-oxide-semiconductor (MOS) FET-based plasmonic THz detector [2, 3] with asymmetric source and drain region considering the device width variations.
  • Keywords
    MOSFET; elemental semiconductors; silicon; terahertz wave detectors; Si; Si metal-oxide-semiconductor FET; asymmetric drain structure; asymmetric source structure; plasmonic THz detector; plasmonic terahertz wave detector; silicon field-effect transistor; Bonding; Detectors; Gyrotrons; Logic gates; Plasmons; Silicon; Wires;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2013 71st Annual
  • Conference_Location
    Notre Dame, IN
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4799-0811-0
  • Type

    conf

  • DOI
    10.1109/DRC.2013.6633811
  • Filename
    6633811
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1574614