Title :
Dielectric charge screening of dislocations and associated electrical phenomena in semiconductors
Author_Institution :
Sch. of Phys., New South Wales Univ., Kensington, NSW, Australia
Abstract :
A dielectric formalism is used to calculate the electrical conductivity of disordered InSb as a representative case. The electrical conductivity of InSb containing dislocations is plotted as a function of temperature and compared with experimental results for pure crystalline InSb. It is shown that dislocations are a stronger source of electrons than impurities; a dislocation provides T2 exp (-0.6/kT) more electrons than the normal charge transport expected in a perfect material
Keywords :
III-V semiconductors; defect electron energy states; dislocation scattering; electrical conductivity of solids; indium antimonide; III-V semiconductor; dielectric charge screening; dielectric formalism; dislocations; disordered InSb; electrical conductivity; pure crystalline InSb; Conductivity; Crystallization; Degradation; Dielectric breakdown; Dielectric losses; Electric breakdown; Electrons; Lattices; Physics; Temperature;
Conference_Titel :
Conduction and Breakdown in Solid Dielectrics, 1989., Proceedings of the 3rd International Conference on
Conference_Location :
Trondheim
DOI :
10.1109/ICSD.1989.69193
