DocumentCode
1574876
Title
Physics and applications of intersubband transitions in patterned inverse quantum dot arrays
Author
Verma, V.B. ; Elarde, V.C. ; Coleman, J.J.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Wright, IL
fYear
2008
Firstpage
761
Lastpage
762
Abstract
The strict TM polarization dependence of intersubband absorption is relaxed in a nanopore lattice in which TE absorption is also allowed. By controlling the nanopore geometry, one can in principle achieve control over the polarization dependence of intersubband absorption. This has potential applications in various types of intersubband devices and in particular quantum well infrared photodetectors.
Keywords
infrared detectors; nanophotonics; nanoporous materials; photodetectors; quantum dot lasers; quantum dots; TE absorption; TM polarization dependence; intersubband absorption; intersubband devices; intersubband transition; nanopore laser diode; nanopore lattice; patterned inverse quantum dot arrays; quantum well infrared photodetector; Diode lasers; Electromagnetic wave absorption; Electrons; Lattices; Nanoporous materials; Optical polarization; Physics; Quantum computing; Quantum dot lasers; Quantum dots;
fLanguage
English
Publisher
ieee
Conference_Titel
IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
Conference_Location
Acapulco
Print_ISBN
978-1-4244-1931-9
Electronic_ISBN
978-1-4244-1932-6
Type
conf
DOI
10.1109/LEOS.2008.4688843
Filename
4688843
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