Exfoliated MoTe2 field-effect transistor

Transition metal dichalcogenides (TMD) are materials with the form MX₂ where M is a metal and X can be Se, S, or Te. These materials have covalent bonding within the layers and Van der Waals bonding between the layers [1]. Unlike graphene, the existence of a band gap eliminates the need to form nanoribbons for two-dimensional crystal tunnel field-effect transistors (TFETs). Among TMDs, molybdenum ditelluride MoTe₂ has the lowest band gap (1 eV) which makes it highly suitable for TFET application. In this paper, we report the first fabrication and electrical characteristics of a MoTe₂ FET, made on exfoliated multilayer crystals.