Title :
Exfoliated MoTe2 field-effect transistor
Author :
Fathipour, S. ; Wan Sik Hwang ; Kosel, T. ; Xing, Huili Grace ; Haensch, Wilfried ; Jena, D. ; Seabaugh, Alan
Author_Institution :
Dept. of Electr. Eng., Univ. of Notre Dame, Notre Dame, IN, USA
Abstract :
Transition metal dichalcogenides (TMD) are materials with the form MX2 where M is a metal and X can be Se, S, or Te. These materials have covalent bonding within the layers and Van der Waals bonding between the layers [1]. Unlike graphene, the existence of a band gap eliminates the need to form nanoribbons for two-dimensional crystal tunnel field-effect transistors (TFETs). Among TMDs, molybdenum ditelluride MoTe2 has the lowest band gap (1 eV) which makes it highly suitable for TFET application. In this paper, we report the first fabrication and electrical characteristics of a MoTe2 FET, made on exfoliated multilayer crystals.
Keywords :
field effect transistors; molybdenum compounds; semiconductor materials; MoTe2; TFET; band gap; covalent bonding; electrical characteristics; exfoliated MoTe2 field-effect transistor; exfoliated multilayer crystals; fabrication; molybdenum ditelluride; transition metal dichalcogenides; tunnel field-effect transistors; van der Waals bonding; Aluminum oxide; Crystals; Lattices; Logic gates; Nonhomogeneous media; Transistors;
Conference_Titel :
Device Research Conference (DRC), 2013 71st Annual
Conference_Location :
Notre Dame, IN
Print_ISBN :
978-1-4799-0811-0
DOI :
10.1109/DRC.2013.6633820
