Title :
Photocurrent imaging of the potential profiles in a graphene transistor
Author :
Xia, Fengnian ; Mueller, Thomas ; Avouris, Phaedon
Author_Institution :
IBM T. J. Watson Res. Center, Yorktown Heights, NY
Abstract :
Photocurrent imaging was used to study the potential profiles in a graphene transistor. The impact of source/drain metal electrodes on potential profile of the graphene channel extends beyond the contact for a few hundred nanometers, and varies considerably with gate bias.
Keywords :
graphene; photoconductivity; transistors; C; gate bias; graphene channel; graphene transistor potential profiles; photocurrent imaging; source-drain metal electrodes; Atomic layer deposition; Contacts; Electrodes; Laser excitation; Lattices; Nanoelectronics; Optical reflection; Palladium; Photoconductivity; Titanium;
Conference_Titel :
IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
Conference_Location :
Acapulco
Print_ISBN :
978-1-4244-1931-9
Electronic_ISBN :
978-1-4244-1932-6
DOI :
10.1109/LEOS.2008.4688844
