DocumentCode
1574891
Title
Photocurrent imaging of the potential profiles in a graphene transistor
Author
Xia, Fengnian ; Mueller, Thomas ; Avouris, Phaedon
Author_Institution
IBM T. J. Watson Res. Center, Yorktown Heights, NY
fYear
2008
Firstpage
763
Lastpage
764
Abstract
Photocurrent imaging was used to study the potential profiles in a graphene transistor. The impact of source/drain metal electrodes on potential profile of the graphene channel extends beyond the contact for a few hundred nanometers, and varies considerably with gate bias.
Keywords
graphene; photoconductivity; transistors; C; gate bias; graphene channel; graphene transistor potential profiles; photocurrent imaging; source-drain metal electrodes; Atomic layer deposition; Contacts; Electrodes; Laser excitation; Lattices; Nanoelectronics; Optical reflection; Palladium; Photoconductivity; Titanium;
fLanguage
English
Publisher
ieee
Conference_Titel
IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
Conference_Location
Acapulco
Print_ISBN
978-1-4244-1931-9
Electronic_ISBN
978-1-4244-1932-6
Type
conf
DOI
10.1109/LEOS.2008.4688844
Filename
4688844
Link To Document