DocumentCode :
1574929
Title :
Quantum corrected drift-diffusion simulation for prediction of CMOS scaling
Author :
SungGeun Kim ; Salmani-Jelodar, Mehdi ; Kwok Ng ; Klimeck, Gerhard
Author_Institution :
Network for Comput. Nanotechnol., Purdue Univ., West Lafayette, IN, USA
fYear :
2013
Firstpage :
119
Lastpage :
120
Abstract :
As the sizes of MOSFETs become smaller, the role of TCAD tools has increased significantly. Among TCAD tools, drift-diffusion (DD) simulators have been useful in providing insights into the operational principles of MOSFETs. DD simulators are fast due to a low computational burden compared to more sophisticated simulation methods such as full-band quantum transport simulators which cannot handle the volume of the bulk devices. However, as the device sizes become smaller, quantum mechanical (QM) effects render the DD results inaccurate. These QM phenomena are the ballistic resistance, the ballistic transport, the source-to-drain (SD) tunneling and the quantum confinement effects. In this work, these QM effects except the SD tunneling are dealt with such that DD tools can extend their use in modern nanoscale MOSFETs.
Keywords :
CMOS integrated circuits; MOSFET; ballistic transport; semiconductor device models; technology CAD (electronics); tunnelling; CMOS scaling prediction; MOSFET; TCAD tools; ballistic resistance; ballistic transport; quantum confinement effects; quantum corrected drift-diffusion simulation; quantum mechanical effects; source-to-drain tunneling; Capacitance-voltage characteristics; Data models; MOSFET; Mathematical model; Potential well; Resistance; Simulation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference (DRC), 2013 71st Annual
Conference_Location :
Notre Dame, IN
ISSN :
1548-3770
Print_ISBN :
978-1-4799-0811-0
Type :
conf
DOI :
10.1109/DRC.2013.6633822
Filename :
6633822
Link To Document :
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