• DocumentCode
    1575293
  • Title

    Injectorless Quantum Cascade Laser with very low voltage-defect grown by metal-organic chemical vapor deposition

  • Author

    Dey, Dibyendu ; Wu, Wei ; Memis, Omer Gokalp ; Mohsen, Hooman

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Northwestern Univ., Evanston, IL
  • fYear
    2008
  • Firstpage
    800
  • Lastpage
    801
  • Abstract
    We demonstrate an In0.66Ga0.34As/In0.355Al0.645As strain-compensated injectorless cascade laser; grown by MOCVD, with voltage defect ~30 meV, which is much lower compared to heterogeneous injector cascade laser with 79 meV and conventional cascade laser with 140 meV.
  • Keywords
    III-V semiconductors; MOCVD; aluminium compounds; gallium arsenide; indium compounds; quantum cascade lasers; semiconductor growth; InGaAs-InAlAs; MOCVD; electron volt energy 140 meV; electron volt energy 79 meV; metal-organic chemical vapor deposition; quantum cascade laser; voltage defect; Chemical vapor deposition; Gold; Low voltage; MOCVD; Optical design; Optical losses; Optical waveguides; Power generation; Quantum cascade lasers; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
  • Conference_Location
    Acapulco
  • Print_ISBN
    978-1-4244-1931-9
  • Electronic_ISBN
    978-1-4244-1932-6
  • Type

    conf

  • DOI
    10.1109/LEOS.2008.4688863
  • Filename
    4688863
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1575293