Title :
Injectorless Quantum Cascade Laser with very low voltage-defect grown by metal-organic chemical vapor deposition
Author :
Dey, Dibyendu ; Wu, Wei ; Memis, Omer Gokalp ; Mohsen, Hooman
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Northwestern Univ., Evanston, IL
Abstract :
We demonstrate an In0.66Ga0.34As/In0.355Al0.645As strain-compensated injectorless cascade laser; grown by MOCVD, with voltage defect ~30 meV, which is much lower compared to heterogeneous injector cascade laser with 79 meV and conventional cascade laser with 140 meV.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; gallium arsenide; indium compounds; quantum cascade lasers; semiconductor growth; InGaAs-InAlAs; MOCVD; electron volt energy 140 meV; electron volt energy 79 meV; metal-organic chemical vapor deposition; quantum cascade laser; voltage defect; Chemical vapor deposition; Gold; Low voltage; MOCVD; Optical design; Optical losses; Optical waveguides; Power generation; Quantum cascade lasers; Temperature;
Conference_Titel :
IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
Conference_Location :
Acapulco
Print_ISBN :
978-1-4244-1931-9
Electronic_ISBN :
978-1-4244-1932-6
DOI :
10.1109/LEOS.2008.4688863
