Title :
Reduction of charge transfer region using graphene nano-ribbon geometry for improved complementary FET performance at sub-micron channel length
Author :
Hollander, Matthew J. ; Shukla, Nitin ; Agrawal, Nidhi ; Madan, Himanshu ; Robinson, Joshua A. ; Datta, Soupayan
Author_Institution :
Pennsylvania State Univ., University Park, PA, USA
Abstract :
In this work, we investigate the effect of nano-ribbon geometries on graphene device performance and explain its effect on reducing the negative impact of Dirac point shift due to charge transfer into the graphene channel from the metal-graphene contact thereby leading to improved device performance and balanced n, p FET performance at submicron channel lengths.
Keywords :
charge exchange; field effect transistors; graphene; nanoribbons; Dirac point shift; charge transfer region; complementary FET performance; graphene channel; graphene device performance; graphene nanoribbon geometry; metal-graphene contact; submicron channel lengths; Charge transfer; Geometry; Graphene; Logic gates; Metals; Nanoscale devices; Performance evaluation;
Conference_Titel :
Device Research Conference (DRC), 2013 71st Annual
Conference_Location :
Notre Dame, IN
Print_ISBN :
978-1-4799-0811-0
DOI :
10.1109/DRC.2013.6633838
