Evaluating the scalability of multilayer MoS2 transistors

In this article we investigate the ultimate scaling potential of multilayer MoS₂ field effect transistors (FETs) with channel lengths ranging from 1μm down to 50nm using a 20nm thick SiO₂ back gate and scandium as the source/drain metal contacts. We also report, for the first time, the in-plane dielectric constant for multilayer MoS₂ as extracted from our experiments, which plays an important role in determining the scaling limit of any channel material. Our results indicate that multilayer MoS₂ FETs are resilient to short channel effects down to 50nm channel length and therefore allow for aggressive channel length scaling likely beyond the 10nm technology node.