• DocumentCode
    1575811
  • Title

    1213nm semiconductor disk laser pumping of a Tm3+-doped tellurite glass laser

  • Author

    Vetter, S. ; Calvez, S. ; Dawson, M.D. ; Fusari, F. ; Lagatsky, A.A. ; Sibbett, W. ; Brown, C.T.A. ; Korpijärvi, V. -M ; Guina, XM ; Richards, B. ; Jose, G. ; Jha, A.

  • Author_Institution
    Inst. of Photonics, Univ. of Strathclyde, Glasgow
  • fYear
    2008
  • Firstpage
    840
  • Lastpage
    841
  • Abstract
    We report the use of a 1213 nm GaInNAs/GaAs semiconductor disk laser as an alternative pump for a Tm3+:TZNG glass laser. Emission with up to 26 mW at 1952 nm with a slope efficiency of 13.3% is obtained.
  • Keywords
    III-V semiconductors; gallium arsenide; germanium compounds; indium compounds; optical pumping; sodium compounds; solid lasers; tellurium compounds; thulium compounds; zinc compounds; GaInNAs-GaAs; TeO2-ZnO-Na2O-GeO2-Tm2O3; efficiency 13.3 percent; optical pumping; power 26 mW; semiconductor disk laser; slope efficiency; thulium-doped tellurite glass laser; wavelength 1213 nm; wavelength 1952 nm; Fiber lasers; Gallium arsenide; Glass; Laser excitation; Laser theory; Pump lasers; Semiconductor laser arrays; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
  • Conference_Location
    Acapulco
  • Print_ISBN
    978-1-4244-1931-9
  • Electronic_ISBN
    978-1-4244-1932-6
  • Type

    conf

  • DOI
    10.1109/LEOS.2008.4688883
  • Filename
    4688883