Title :
1213nm semiconductor disk laser pumping of a Tm3+-doped tellurite glass laser
Author :
Vetter, S. ; Calvez, S. ; Dawson, M.D. ; Fusari, F. ; Lagatsky, A.A. ; Sibbett, W. ; Brown, C.T.A. ; Korpijärvi, V. -M ; Guina, XM ; Richards, B. ; Jose, G. ; Jha, A.
Author_Institution :
Inst. of Photonics, Univ. of Strathclyde, Glasgow
Abstract :
We report the use of a 1213 nm GaInNAs/GaAs semiconductor disk laser as an alternative pump for a Tm3+:TZNG glass laser. Emission with up to 26 mW at 1952 nm with a slope efficiency of 13.3% is obtained.
Keywords :
III-V semiconductors; gallium arsenide; germanium compounds; indium compounds; optical pumping; sodium compounds; solid lasers; tellurium compounds; thulium compounds; zinc compounds; GaInNAs-GaAs; TeO2-ZnO-Na2O-GeO2-Tm2O3; efficiency 13.3 percent; optical pumping; power 26 mW; semiconductor disk laser; slope efficiency; thulium-doped tellurite glass laser; wavelength 1213 nm; wavelength 1952 nm; Fiber lasers; Gallium arsenide; Glass; Laser excitation; Laser theory; Pump lasers; Semiconductor laser arrays; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
Conference_Location :
Acapulco
Print_ISBN :
978-1-4244-1931-9
Electronic_ISBN :
978-1-4244-1932-6
DOI :
10.1109/LEOS.2008.4688883
