Title :
Calculation of the Deposition Rate for Metal Organic Chemical Vapor Deposition (MOCVD)
Author :
Soroosh, Mohammad
Author_Institution :
Fac. member of islamic, Azad Univ., Tehran
Abstract :
We calculate the deposition rate of TiO2 for MOCVD. Using an equation and multi-layer perceptron neural network, we present a model to simulation of deposition rate. Susceptor and source temperature, flow rate of the carrier gas for the precursor and chamber pressure are important factors to our simulation. Our results have good agreement with experimental data.
Keywords :
MOCVD; electronic engineering computing; multilayer perceptrons; deposition rate; metal organic chemical vapor deposition; multilayer perceptron neural network; Biological neural networks; Chemical vapor deposition; Equations; MOCVD; Neural networks; Optical films; Organic chemicals; Semiconductor films; Semiconductor process modeling; Temperature; MOCVD; Neural Network;
Conference_Titel :
Information and Communication Technologies: From Theory to Applications, 2008. ICTTA 2008. 3rd International Conference on
Conference_Location :
Damascus
Print_ISBN :
978-1-4244-1751-3
Electronic_ISBN :
978-1-4244-1752-0
DOI :
10.1109/ICTTA.2008.4530021
