• DocumentCode
    1575836
  • Title

    Calculation of the Deposition Rate for Metal Organic Chemical Vapor Deposition (MOCVD)

  • Author

    Soroosh, Mohammad

  • Author_Institution
    Fac. member of islamic, Azad Univ., Tehran
  • fYear
    2008
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    We calculate the deposition rate of TiO2 for MOCVD. Using an equation and multi-layer perceptron neural network, we present a model to simulation of deposition rate. Susceptor and source temperature, flow rate of the carrier gas for the precursor and chamber pressure are important factors to our simulation. Our results have good agreement with experimental data.
  • Keywords
    MOCVD; electronic engineering computing; multilayer perceptrons; deposition rate; metal organic chemical vapor deposition; multilayer perceptron neural network; Biological neural networks; Chemical vapor deposition; Equations; MOCVD; Neural networks; Optical films; Organic chemicals; Semiconductor films; Semiconductor process modeling; Temperature; MOCVD; Neural Network;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Information and Communication Technologies: From Theory to Applications, 2008. ICTTA 2008. 3rd International Conference on
  • Conference_Location
    Damascus
  • Print_ISBN
    978-1-4244-1751-3
  • Electronic_ISBN
    978-1-4244-1752-0
  • Type

    conf

  • DOI
    10.1109/ICTTA.2008.4530021
  • Filename
    4530021
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1575836