Title :
High-power single-mode laser diodes with tapered amplifiers
Author :
Lammert, R.M. ; Osowski, M.L. ; Elarde, V.C. ; Oh, S.W. ; Rudy, P.T. ; Hu, W. ; Stakelon, T. ; Vaissie, L. ; Ungar, J.E.
Author_Institution :
QPC Lasers Inc., Sylmar, CA
Abstract :
Both InP-based and GaAs-based high-power single-mode lasers are described. Single-mode powers of 9 W at 1064 nm and 1.2 W at 1550 nm have been achieved.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser modes; laser stability; semiconductor lasers; InP; power 1.2 W; power 9 W; single-mode laser diodes; tapered amplifiers; wavelength 1064 nm; wavelength 1550 nm; Diode lasers; Fiber lasers; High power amplifiers; Optical amplifiers; Optical fiber amplifiers; Optical fiber devices; Power amplifiers; Power generation; Semiconductor optical amplifiers; Temperature;
Conference_Titel :
IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
Conference_Location :
Acapulco
Print_ISBN :
978-1-4244-1931-9
Electronic_ISBN :
978-1-4244-1932-6
DOI :
10.1109/LEOS.2008.4688888
