Title :
Advances in the development of the GaSb-based laser diodes operating within spectral range of 2 – 3.5 μm
Author :
Belenky, G. ; Shterengas, L. ; Kipshidze, G. ; Hosoda, T. ; Suchalkin, S.
Author_Institution :
State Univ. of New York at Stony Brook, Stony Brook, NY
Abstract :
This work discusses the latest achievements in design and performance of type I GaSb based lasers. It focuses on the performance of the room temperature operated lasers based on InGaAsSb/AlGaAsSb/GaSb and InGaAsSb/InAlGaAsSb/GaSb compressively strained heterostructures. The characteristics of the double-quantum-well GaSb-based diode lasers operating in 2.3-2.4 mum region with a room-temperature CW output power in excess of 1 W and a maximum power-conversion efficiency of 20 % are also presented and discussed.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; infrared sources; quantum well lasers; GaSb-based laser diodes; InGaAsSb-AlGaAsSb-GaSb; InGaAsSb-InAlGaAsSb-GaSb; compressively strained heterostructures; double-quantum-well lasers; power-conversion efficiency; room temperature operation; temperature 293 K to 298 K; wavelength 2 mum to 3.5 mum; Capacitive sensors; Diode lasers; Gas lasers; Laser modes; Optical design; Power generation; Power lasers; Quantum well lasers; Temperature measurement; Waveguide lasers;
Conference_Titel :
IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
Conference_Location :
Acapulco
Print_ISBN :
978-1-4244-1931-9
Electronic_ISBN :
978-1-4244-1932-6
DOI :
10.1109/LEOS.2008.4688891
