Title :
A CMOS compatible thermally excited silicon oxide beam resonator with aluminum mirror
Author :
Moser, D. ; Brand, O. ; Baltes, H.
Author_Institution :
Phys. Electron. Lab., Swiss Federal Inst. of Technol., Zurich, Switzerland
Abstract :
The authors designed, manufactured, and characterized a thermally excited silicon oxide beam resonator based on CMOS technology with subsequent micromachining. Besides optical measurements of the resonance frequencies and vibration amplitudes, the acoustic transmission efficiency of the device in air was investigated. At a fundamental resonance of 10.35 kHz, a vibration amplitude of 2 mu m at the tip of the beam with a dynamic heating power P/sub dyn1/=2.5 mW and a sound pressure of 2.8 mPa with P/sub dyn1/=7.4 mW at 4 mm distance from the chip were measured. The oxide beam was simulated with the finite-element program ANSYS to obtain the shape of the resonant modes.<>
Keywords :
CMOS integrated circuits; acoustic variables measurement; aluminium; digital simulation; electric sensing devices; electronic engineering computing; finite element analysis; frequency measurement; integrated circuit technology; micromechanical devices; resonators; vibration measurement; 10.35 kHz; 2.5 mW; 2.8 mPa; 4 mm; 7.4 mW; ANSYS; Al-SiO/sub x/-Si; CMOS technology; acoustic transmission efficiency; dynamic heating power; finite-element program; micromachining; optical measurements; pressure sensor; resonance frequencies; resonant modes; thermally excited beam resonator; vibration amplitudes; Acoustic beams; Acoustic measurements; CMOS technology; Manufacturing; Micromachining; Optical devices; Optical resonators; Resonance; Silicon; Vibration measurement;
Conference_Titel :
Solid-State Sensors and Actuators, 1991. Digest of Technical Papers, TRANSDUCERS '91., 1991 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-87942-585-7
DOI :
10.1109/SENSOR.1991.148934
