Title :
Normally-Off GaN-on-Si transistors enabling nanosecond power switching at one kilowatt
Author :
Rongming Chu ; Hughes, Brian ; Chen, Mei ; Brown, Dean ; Li, Ruodai ; Khalil, Sahra ; Zehnder, Daniel ; Chen, S. ; Williams, Albert ; Garrido, Austin ; Musni, Marcel ; Boutros, Karim
Author_Institution :
HRL Labs. LLC, Malibu, CA, USA
Abstract :
Power switches based on GaN-on-Si transistor technology have the advantage of high switching speed and low fabrication cost. This paper reports our recent advancement in device technology which enabled nanosecond switching at one kilowatt, with an unprecedented slew rate of 325 V/ns. The high switching speed opens up pathways for emerging applications such as envelope tracking and wireless power charging.
Keywords :
III-V semiconductors; gallium compounds; power semiconductor switches; silicon; GaN; GaN-on-Si transistor technology; Si; envelope tracking; nanosecond power switching; power 1 kW; power switches; wireless power charging; Current measurement; Logic gates; Semiconductor device measurement; Stress; Switching circuits; Transistors; Voltage measurement;
Conference_Titel :
Device Research Conference (DRC), 2013 71st Annual
Conference_Location :
Notre Dame, IN
Print_ISBN :
978-1-4799-0811-0
DOI :
10.1109/DRC.2013.6633862
