DocumentCode :
15762
Title :
Low-Power, Minimally Invasive Process Compensation Technique for Sub-Micron CMOS Amplifiers
Author :
Mukadam, Mustansir Y. ; Gouveia-Filho, Oscar C. ; Kramer, Nicholas ; Xuan Zhang ; Apsel, A.B.
Author_Institution :
Dept. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA
Volume :
22
Issue :
1
fYear :
2014
fDate :
Jan. 2014
Firstpage :
1
Lastpage :
12
Abstract :
Process variation is an obstacle in designing reliable CMOS mixed signal systems with high yield. To minimize the variation in voltage gain due to variations in process, supply voltage, and temperature for common transconductance-based amplifiers, we present a new compensation method based on statistical feedback of process information. We develop the background theory of the scheme and present its performance across process corners. We further apply our scheme to two well known amplifier topologies in the TSMC 65 nm CMOS process as design examples-an inductive degenerated low-noise amplifier (LNA) and a common source amplifier (CSA). Measured results over 100 chips of the LNA show that our compensation technique reduces variation in gain by a factor of 3.7× compared to the baseline case. The CSA exhibits similar reductions in gain variation across 88 measured chips. We also present measured results demonstrating how our technique alleviates voltage gain variations caused by temperature and supply voltage changes.
Keywords :
CMOS analogue integrated circuits; integrated circuit design; integrated circuit reliability; low noise amplifiers; CMOS mixed signal system reliability design; CSA; TSMC CMOS process; amplifier topology; background theory; common source amplifier; common transconductance-based amplifiers; gain variation; inductive degenerated LNA; inductive degenerated low-noise amplifier; low-power minimally-invasive process compensation technique; process information; process variation; size 65 nm; statistical feedback; submicron CMOS amplifiers; supply voltage; voltage gain; voltage gain variation; Gain measurement; Logic gates; Threshold voltage; Topology; Transconductance; Transistors; Voltage measurement; CMOS analog integrated circuits; process compensation; process variation; self-biasing;
fLanguage :
English
Journal_Title :
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
1063-8210
Type :
jour
DOI :
10.1109/TVLSI.2012.2232685
Filename :
6414667
Link To Document :
بازگشت