Title :
Red-emitting InGaN/GaN quantum dot laser
Author :
Frost, Thomas ; Banerjee, Adrish ; Bhattacharya, Pallab
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
Abstract :
Here demonstrated, for the first time, a red-emitting (λ=635 nm) laser in the nitride system using InGaN/GaN QDs. The red emitting QD laser heterostructure is grown on c-plane bulk GaN substrates having a defect density of ~1x105 cm-2 by plasma-assisted molecular beam epitaxy (PA-MBE). The GaN, AlGaN, and InGaN layers were grown at 740°C, 770°C and 590°C, respectively, while the QDs were grown at 530°C.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; molecular beam epitaxial growth; plasma deposition; quantum dot lasers; wide band gap semiconductors; AlGaN-GaN; GaN; InGaN-GaN; PAMBE; c-plane bulk GaN substrates; defect density; nitride system; plasma-assisted molecular beam epitaxy; red emitting QD laser heterostructure; red-emitting quantum dot laser; temperature 530 degC to 770 degC; Cavity resonators; Gain measurement; Gallium nitride; Measurement by laser beam; Quantum cascade lasers; Quantum dot lasers; Waveguide lasers;
Conference_Titel :
Device Research Conference (DRC), 2013 71st Annual
Conference_Location :
Notre Dame, IN
Print_ISBN :
978-1-4799-0811-0
DOI :
10.1109/DRC.2013.6633870
