Title :
Hard-soldered InGaAsP single-emitter diode lasers on CTE-matched heatsinks deliver record power
Author :
Leisher, Paul ; Wise, Damian ; Price, Kirk ; Dong, Weimin ; Grimshaw, Mike ; Patterson, Steve
Author_Institution :
NLight Corp., Vancouver, WA
Abstract :
Applications such as direct pumping of rare-earth doped solid state and fiber lasers are driving development of higher power commercial diode lasers operating in the 1400 -nm to 2000 -nm band. In this work, we report on recent progress in high-power hard-soldered InGaAsP-based single emitter diode lasers. Peak continuous wave (CW) powers of 4 W, 2.3 W, and 1.4 W are measured at 25 degC for lasers operating at 1470 nm, 1700 nm, and 1940 nm, respectively. Quasi-continuous wave (QCW) power at 1700 -nm in excess of >10 W (peak) is reported from a single 150 -mum stripe emitter and >150W (peak) in a 16 emitter array configuration.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; laser variables measurement; power measurement; semiconductor lasers; soldering; thermal expansion; CTE; InGaAsP; InGaAsP single-emitter diode lasers; hard soldering; heatsinks; peak continuous wave power; power 1.4 W; power 2.3 W; power 4 W; quasi-continuous wave power; size 150 mum; temperature 25 degC; thermal expansion coeficient; wavelength 1470 nm; wavelength 1700 nm; wavelength 1940 nm; Diode lasers; Fiber lasers; Heat sinks; Laser excitation; Power lasers; Pump lasers; Quantum cascade lasers; Semiconductor laser arrays; Solid lasers; Solid state circuits;
Conference_Titel :
IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
Conference_Location :
Acapulco
Print_ISBN :
978-1-4244-1931-9
Electronic_ISBN :
978-1-4244-1932-6
DOI :
10.1109/LEOS.2008.4688911
