DocumentCode :
1576631
Title :
Complete band alignment determination of InAs-GaSb broken-gap tunneling field-effect transistor hetero-junction
Author :
Li, Wenyuan ; Zhang, Qi ; Kirillov, O.A. ; Bijesh, R. ; Liang, Yun ; Mohata, D. ; Tian, Bailing ; Liang, Xianling ; Datta, Soupayan ; Richter, Curt A. ; Gundlach, D.J. ; Nguyen, N.V.
Author_Institution :
Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
fYear :
2013
Firstpage :
1
Lastpage :
2
Abstract :
The Tunneling Field-Effect Transistor (TFET) is currently considered to be a promising candidate for future low power electronic device applications because of its potential to achieve less than 60mV/decade subthreshold slope. Broken-gap hetero-junction TFETs are particularly attractive because they have been shown to have improved on-state performance compared to other TFET architectures due to the lower tunnel barrier heights.[1] Accurate band alignment determination is therefore critical to the design of proper band offsets at the hetero-junction interface. Here, we report the first complete band alignment determination for these structures by tailoring the layer thickness of the junction [2] and then using of graphene as transparent electrodes in an internal photo emission (IPE) me asurement to probe both electron and hole emission[3].
Keywords :
III-V semiconductors; field effect transistors; gallium compounds; graphene; indium compounds; photoemission; semiconductor heterojunctions; tunnel transistors; C; InAs-GaSb; InAs-GaSb broken-gap tunneling field-effect transistor hetero-junction; TFET; band alignment determination; band offsets; electron emission; graphene; hole emission; internal photo emission measurement; junction layer thickness; on-state performance; transparent electrodes; Aluminum oxide; Charge carrier processes; Educational institutions; Electrodes; Graphene; Photoelectricity; Thickness measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference (DRC), 2013 71st Annual
Conference_Location :
Notre Dame, IN
ISSN :
1548-3770
Print_ISBN :
978-1-4799-0811-0
Type :
conf
DOI :
10.1109/DRC.2013.6633885
Filename :
6633885
Link To Document :
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