Depletion-mode Ga2O3 MOSFETs

We have been proposing a new oxide compound semiconductor, gallium oxide (Ga₂O₃), as a promising candidate for power device applications because of its excellent material properties and suitability for mass production. The 4.8-eV bandgap and the Baliga´s figure of merit of Ga₂O₃ are much larger than those of SiC and GaN, which will enable Ga₂O₃ power devices with higher breakdown voltage and efficiency than SiC and GaN devices. The other important advantage of Ga₂O₃ is that a single-crystal bulk can be grown by using the same melt growth method as is used for sapphire. Therefore, Ga₂O₃ power devices have the obvious potential to surpass SiC and GaN in not only device performance but also cost effectiveness. In this work, we fabricated and demonstrated depletion-mode Ga₂O₃ metal-oxide-semiconductor field-effect transistors (MOSFETs).