Title :
Dynamic power supply current test for CMOS SRAM
Author :
Yoon, Doe Hyun ; Kim, Hong Sik ; Kang, Sungho
Author_Institution :
Dept. of Electr. Eng., Yonsei Univ., Seoul, South Korea
fDate :
6/21/1905 12:00:00 AM
Abstract :
This paper presents the relationship between the dynamic power supply current and the switching behavior of an SRAM cell. Compared to a fault free cell, how the short, open and coupling faults can affect the peak value of a dynamic current pulse when a transition write is performed, is analyzed. In addition, the test for linked idempotent coupling faults is proposed. This new approach has reduced test length compared to the previous March B test. Finally the low overhead built-in current sensor that can detect a dynamic current pulse and distinguish its peak value, is proposed
Keywords :
CMOS memory circuits; SRAM chips; integrated circuit testing; CMOS SRAM; built-in current sensor; coupling fault; dynamic power supply current testing; open fault; short fault; switching; Circuit faults; Circuit testing; Current measurement; Current supplies; Electronic equipment testing; Logic testing; Power measurement; Power supplies; Pulsed power supplies; Random access memory;
Conference_Titel :
VLSI and CAD, 1999. ICVC '99. 6th International Conference on
Conference_Location :
Seoul
Print_ISBN :
0-7803-5727-2
DOI :
10.1109/ICVC.1999.820944
