Title :
Improved etching technique of E-ICP (Enhanced Inductively Coupled Plasma)
Author :
Jeong, Jae Seong ; O, Beom-Hoan ; Park, Se-Geun
Author_Institution :
Sch. of Electr. & Comput. Eng., Inha Univ., Inchon, South Korea
fDate :
6/21/1905 12:00:00 AM
Abstract :
A novel technique, named as “Enhanced-ICP”, for a better etch process, has been proposed. Here, we report an improved result of the E-ICP. A photo-resist etch uniformity of below 1% within 10 cm in diameter has been accomplished with improved plasma density and the low electron temperature of 1 eV
Keywords :
photolithography; plasma density; semiconductor technology; sputter etching; Si; enhanced inductively coupled plasma; etching technique; photoresist etch uniformity; plasma density; Coils; Electrons; Etching; Magnetic fields; Plasma applications; Plasma density; Plasma sources; Plasma temperature; Plasma waves; Power generation economics;
Conference_Titel :
VLSI and CAD, 1999. ICVC '99. 6th International Conference on
Conference_Location :
Seoul
Print_ISBN :
0-7803-5727-2
DOI :
10.1109/ICVC.1999.820958
