Thermally stable W-bit line technology for ULSI device application

Author

Kim, Young Soo ; Park, Nae Hak ; Kim, Jun Ki ; Han, Sang Beom ; Lee, Kyungho

Author_Institution

R&D Div., Hyundai Micro Electron. Ltd., Cheongju, South Korea

fYear

1999

fDate

6/21/1905 12:00:00 AM

Firstpage

480

Lastpage

483

Abstract

We have investigated the various types of diffusion barriers for the thermally stable W-bit line structure. We estimated the thermal stability and the electrical characteristics of various barrier structures after annealing at 850°C and then optimized the W-bit line process. A newly developed PVD-Ti/PVD-TiN/RTP/Strip/PVD-TiN/CVD-W structure showed good integrity with the W-bit line after high temperature processing. It is concluded that the prevention of oxygen penetration during silicidation is most important for the formation of a uniform silicide layer and better contact characteristics

Keywords

diffusion barriers; integrated circuit interconnections; integrated circuit metallisation; rapid thermal annealing; thermal stability; tungsten; 850 degC; Si-Ti-TiN-W; ULSI; annealing; diffusion barriers; high temperature processing; interconnects; silicidation; thermal stability; thermally stable W-bit line technology; Annealing; Electric variables; Electrical resistance measurement; Silicides; Surface morphology; Surface treatment; Temperature; Thermal stability; Tin; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI and CAD, 1999. ICVC '99. 6th International Conference on

Conference_Location

Seoul

Print_ISBN

0-7803-5727-2

Type

conf

DOI

10.1109/ICVC.1999.820975

Filename

820975