Title :
The halo nMOSFET characteristics dependent on the gate profile
Author :
Kim, Jae-Hyung ; Choy, Jun-Ho ; Song, Doo-Heon ; Lee, Young-Jong ; Lee, Kyung-Ho
Author_Institution :
Div. of R&D, Hyundai Microelectron. Co., Cheongju, South Korea
fDate :
6/21/1905 12:00:00 AM
Abstract :
Device characteristics with a barrel-type gate profile caused by the proximity effect were investigated. We show that enhanced hot carrier degradation may result and a decrease of the gate to drain overlap capacitance may occur because of the offset region between the LDD region and the gate electrode. Finally we have recommended a method of measuring gate line width (CD, Critical Dimension) for more precise expectations of the device characteristics
Keywords :
MOSFET; capacitance; gate line width; gate profile; gate-drain overlap capacitance; hot carrier degradation; nMOSFET; proximity effect; CMOS technology; Capacitance; Degradation; Electrodes; Hot carriers; MOSFET circuits; Medical simulation; Proximity effect; Random access memory; Research and development;
Conference_Titel :
VLSI and CAD, 1999. ICVC '99. 6th International Conference on
Conference_Location :
Seoul
Print_ISBN :
0-7803-5727-2
DOI :
10.1109/ICVC.1999.820977
