Title :
Novel Al2O3 capacitor for high density DRAMs
Author :
Lim, J.S. ; Kim, Y.K. ; Choi, S.J. ; Lee, J.H. ; Kim, Y.S. ; Lee, B.T. ; Park, H.S. ; Park, Y.W. ; Lee, S.I.
Author_Institution :
Semicond. R&D Center, Samsung Electron. Co. Ltd., Kyungki, South Korea
fDate :
6/21/1905 12:00:00 AM
Abstract :
A poly-Si/Al2O3/poly-Si capacitor is developed for the simple integration of 256 Mb DRAM and beyond. The oxide equivalent thickness (T0xeq) of the Al2O3 capacitor was achieved as small as 28 nm, which is about 1.7 times smaller than that of advanced NO capacitor. Especially, the pre-treatment before the deposition of Al2O 3 film plays a crucial role for stable device performance. Moreover, one of the distinguished characteristics of the Al2O3 capacitor is that the capacitance was even enhanced by performing the conventional DRAM processes, including the high temperature planarization method known as BPSG flow, without degrading the leakage characteristics
Keywords :
DRAM chips; alumina; capacitors; elemental semiconductors; semiconductor-insulator-semiconductor structures; silicon; surface treatment; Si-Al2O3-Si; capacitance; high density DRAMs; high temperature planarization; leakage characteristics; oxide equivalent thickness; poly-Si/Al2O3/poly-Si capacitor; Amorphous materials; Annealing; Capacitance; Capacitors; Electrodes; Optical films; Planarization; Random access memory; Refractive index; Temperature;
Conference_Titel :
VLSI and CAD, 1999. ICVC '99. 6th International Conference on
Conference_Location :
Seoul
Print_ISBN :
0-7803-5727-2
DOI :
10.1109/ICVC.1999.820987
