Microelectromechanical Relay and Logic Circuit Design for Zero Crowbar Current

Author

Fujiki, Jun ; Nuo Xu ; Hutin, Louis ; I-Ru Chen ; Chuang Qian ; Tsu-Jae King Liu

Author_Institution

Toshiba Corp., Tokyo, Japan

Volume

61

Issue

9

fYear

2014

fDate

Sept. 2014

Firstpage

3296

Lastpage

3302

Abstract

A compact microelectromechanical (MEM) switch design and associated family of logic gates, memory cells, and other basic very-large-scale integration (VLSI) digital circuit sub blocks are proposed to ensure zero crowbar current in addition to zero leakage current while minimizing mechanical delay. The circuit design methodology introduced in this paper also provides for lower device count and hence lower operating power consumption. A prototype of the MEM switch design is demonstrated.

Keywords

VLSI; digital circuits; leakage currents; logic circuits; logic gates; microrelays; MEM switch design; VLSI; digital circuit; logic circuit design; logic gates; memory cells; microelectromechanical relay; microelectromechanical switch design; very-large-scale integration; zero crowbar current; zero leakage current; Contacts; Electrodes; Force; Logic gates; Relays; Switches; Switching circuits; Complementary logic; crowbar current; microelectromechanical (MEM) relay; pass-gate logic; zero leakage; zero leakage.;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2014.2336855

Filename

6867312