Title :
10Gb/s silicon modulator based on bulk-silicon platform for DRAM optical interface
Author :
Lee, K. -H ; Shin, D.J. ; Ji, H. -C ; Na, K.W. ; Kim, S.G. ; Bok, J.K. ; You, Y.S. ; Kim, S.S. ; Joe, I.S. ; Suh, S.D. ; Pyo, J.H. ; Shin, Y.H. ; Ha, K.H. ; Park, Y.D. ; Chung, C.H.
Author_Institution :
Semicond. R&D Center, Samsung Electron., Yongin, South Korea
Abstract :
We present 10Gb/s silicon Mach-Zehnder modulators fabricated on a bulk silicon wafer. 10 Gb/s data transmission with extinction ratio of >;9 dB at de-emphasis level of 12 dB is successfully demonstrated.
Keywords :
DRAM chips; data communication; elemental semiconductors; modulators; optical interconnections; silicon; wafer-scale integration; DRAM optical interface; bit rate 10 Gbit/s; bulk silicon wafer; data transmission; dynamic random access memory; silicon Mach-Zehnder modulator; Fiber optics; Optical attenuators; Optical device fabrication; Optical filters; Optical modulation; Optical pulses;
Conference_Titel :
Optical Fiber Communication Conference and Exposition (OFC/NFOEC), 2011 and the National Fiber Optic Engineers Conference
Conference_Location :
Los Angeles, CA
Print_ISBN :
978-1-4577-0213-6
